Graphene growth on Ge(100)/Si(100) substrates by CVD method
نویسندگان
چکیده
منابع مشابه
Graphene growth on Ge(100)/Si(100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide du...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep21773